RAPID CHEMICAL VAPOR-DEPOSITION OF SI3N4

被引:13
作者
HIRAI, T [1 ]
NIIHARA, K [1 ]
GOTO, T [1 ]
机构
[1] TOHOKU UNIV,IRON STEEL & OTHER MET RES INST,SENDAI,MIYAGI 980,JAPAN
关键词
D O I
10.1007/BF00540292
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:631 / 632
页数:2
相关论文
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[1]   CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE .2. DENSITY AND FORMATION MECHANISM [J].
NIIHARA, K ;
HIRAI, T .
JOURNAL OF MATERIALS SCIENCE, 1976, 11 (04) :604-611
[2]   CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE .1. PREPARATION AND SOME PROPERTIES [J].
NIIHARA, K ;
HIRAI, T .
JOURNAL OF MATERIALS SCIENCE, 1976, 11 (04) :593-603