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CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE .1. PREPARATION AND SOME PROPERTIES
被引:79
作者
:
NIIHARA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,IRON STEEL & OTHER MET RES INST,SENDAI 980,JAPAN
TOHOKU UNIV,IRON STEEL & OTHER MET RES INST,SENDAI 980,JAPAN
NIIHARA, K
[
1
]
HIRAI, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,IRON STEEL & OTHER MET RES INST,SENDAI 980,JAPAN
TOHOKU UNIV,IRON STEEL & OTHER MET RES INST,SENDAI 980,JAPAN
HIRAI, T
[
1
]
机构
:
[1]
TOHOKU UNIV,IRON STEEL & OTHER MET RES INST,SENDAI 980,JAPAN
来源
:
JOURNAL OF MATERIALS SCIENCE
|
1976年
/ 11卷
/ 04期
关键词
:
D O I
:
10.1007/BF01209443
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:593 / 603
页数:11
相关论文
共 30 条
[1]
SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS OBTAINED BY REACTION OF SIBR4 AND NH3
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
ABOAF, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(12)
: 1736
-
&
[2]
AIREY AC, 1973, P BRIT CERAMIC SOC, V22, P305
[3]
SILICON NITRIDE THIN FILM DIELECTRIC
BARNES, CR
论文数:
0
引用数:
0
h-index:
0
BARNES, CR
GEESNER, CR
论文数:
0
引用数:
0
h-index:
0
GEESNER, CR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(02)
: 98
-
100
[4]
SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
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0
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0
h-index:
0
BEAN, KE
GLEIM, PS
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0
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0
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0
GLEIM, PS
YEAKLEY, RL
论文数:
0
引用数:
0
h-index:
0
YEAKLEY, RL
RUNYAN, WR
论文数:
0
引用数:
0
h-index:
0
RUNYAN, WR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(07)
: 733
-
&
[5]
PROPERTIES OF SIXOYNZ FILMS ON SI
BROWN, DM
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0
引用数:
0
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机构:
General Electric Research and Development Center, Schenectady, New York
BROWN, DM
GRAY, PV
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General Electric Research and Development Center, Schenectady, New York
GRAY, PV
HEUMANN, FK
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0
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0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
HEUMANN, FK
PHILIPP, HR
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0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
PHILIPP, HR
TAFT, EA
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0
引用数:
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h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
TAFT, EA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 311
-
&
[6]
PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
CHU, TL
论文数:
0
引用数:
0
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0
CHU, TL
LEE, CH
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0
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0
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0
LEE, CH
GRUBER, GA
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0
引用数:
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GRUBER, GA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(07)
: 717
-
&
[7]
DEPOSITING SILICON NITRIDE LAYERS AT LOW TEMPERATURE USING A PHOTOCHEMICAL REACTION
COLLET, MG
论文数:
0
引用数:
0
h-index:
0
COLLET, MG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(01)
: 110
-
&
[8]
Colquhoun I., 1973, Proceedings of the British Ceramic Society, P207
[9]
STRUCTURE AND SODIUM MIGRATION IN SILICON NITRIDE FILMS
DALTON, JV
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DALTON, JV
DROBEK, J
论文数:
0
引用数:
0
h-index:
0
DROBEK, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(08)
: 865
-
+
[10]
CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
DEAL, BE
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
MACKENNA, EL
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 997
-
&
←
1
2
3
→
共 30 条
[1]
SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS OBTAINED BY REACTION OF SIBR4 AND NH3
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
ABOAF, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(12)
: 1736
-
&
[2]
AIREY AC, 1973, P BRIT CERAMIC SOC, V22, P305
[3]
SILICON NITRIDE THIN FILM DIELECTRIC
BARNES, CR
论文数:
0
引用数:
0
h-index:
0
BARNES, CR
GEESNER, CR
论文数:
0
引用数:
0
h-index:
0
GEESNER, CR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(02)
: 98
-
100
[4]
SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
BEAN, KE
GLEIM, PS
论文数:
0
引用数:
0
h-index:
0
GLEIM, PS
YEAKLEY, RL
论文数:
0
引用数:
0
h-index:
0
YEAKLEY, RL
RUNYAN, WR
论文数:
0
引用数:
0
h-index:
0
RUNYAN, WR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(07)
: 733
-
&
[5]
PROPERTIES OF SIXOYNZ FILMS ON SI
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
GRAY, PV
HEUMANN, FK
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
HEUMANN, FK
PHILIPP, HR
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
PHILIPP, HR
TAFT, EA
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
TAFT, EA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 311
-
&
[6]
PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
CHU, TL
论文数:
0
引用数:
0
h-index:
0
CHU, TL
LEE, CH
论文数:
0
引用数:
0
h-index:
0
LEE, CH
GRUBER, GA
论文数:
0
引用数:
0
h-index:
0
GRUBER, GA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(07)
: 717
-
&
[7]
DEPOSITING SILICON NITRIDE LAYERS AT LOW TEMPERATURE USING A PHOTOCHEMICAL REACTION
COLLET, MG
论文数:
0
引用数:
0
h-index:
0
COLLET, MG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(01)
: 110
-
&
[8]
Colquhoun I., 1973, Proceedings of the British Ceramic Society, P207
[9]
STRUCTURE AND SODIUM MIGRATION IN SILICON NITRIDE FILMS
DALTON, JV
论文数:
0
引用数:
0
h-index:
0
DALTON, JV
DROBEK, J
论文数:
0
引用数:
0
h-index:
0
DROBEK, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(08)
: 865
-
+
[10]
CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
DEAL, BE
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
MACKENNA, EL
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 997
-
&
←
1
2
3
→