CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE .2. DENSITY AND FORMATION MECHANISM

被引：39

作者：

NIIHARA, K ^{[1
]}

HIRAI, T ^{[1
]}

机构：

[1] TOHOKU UNIV,IRON STEEL & OTHER MET RES INST,SENDAI 980,JAPAN

来源：

JOURNAL OF MATERIALS SCIENCE | 1976年 / 11卷 / 04期

关键词：

D O I：

10.1007/BF01209444

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：604 / 611

页数：8

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