GROWTH, PROPERTIES AND APPLICATIONS OF HGCDTE

被引：53

作者：

SCHMIT, JL

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 65卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(83)90057-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：249 / 261

页数：13

共 20 条

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[2] COMPARISON OF HG0.6CD0.4TE LPE LAYER GROWTH FROM TE-RICH, HG-RICH, AND HGTE-RICH SOLUTIONS [J].

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[3] THE BEHAVIOR OF SELECTED IMPURITIES IN CDXHG1-XTE [J].

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[6] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].

HANSEN, GL ;

SCHMIT, JL ;

CASSELMAN, TN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7099-7101

[7] CALCULATION OF INTRINSIC CARRIER CONCENTRATION IN HG1-XCDXTE [J].

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SCHMIT, JL .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1639-1640

[8]

Harman T. C., 1972, J ELECTRON MATER, V1, P230

[9] THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE [J].

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MULLIN, JB .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :107-115

[10] DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE [J].

JOHNSON, ES ;

SCHMIT, JL .

JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (01) :25-38

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