GALLIUM-ARSENIDE SURFACE RECONSTRUCTIONS DURING ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：52

作者：

LAMELAS, FJ

FUOSS, PH

IMPERATORI, P

KISKER, DW

STEPHENSON, GB

BRENNAN, S

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] STANFORD SYNCHROTRON RADIAT LAB,STANFORD,CA 94309

[3] CNR,ITSE,I-00016 MONTEROTONDO,ITALY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 21期

关键词：

D O I：

10.1063/1.106924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ surface x-ray scattering studies of the GaAs(001) surface were used to determine whether specific surface reconstructions occur during organometallic vapor-phase epitaxy. Prior to growth, we find that surfaces heated in the presence of As form a c(4 x 4) structure, while those heated in the absence of organometallics or in Ga form two similar fourfold reconstructions. We find no evidence for the presence of any surface reconstruction during the actual layer-by-layer growth process.

引用

页码：2610 / 2612

页数：3

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