THE INTERACTION OF HYDROGEN WITH GAAS-SURFACES

被引：5

作者：

BACHRACH, RZ ^{[1
]}

BRINGANS, RD ^{[1
]}

机构：

[1] STANFORD SYNCHROTRON RADIAT LAB,STANFORD,CA 94305

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1982518

中图分类号：

学科分类号：

摘要：

引用

页码：145 / 151

页数：7

共 20 条

[1] GAAS(100) - ITS SPECTRUM, EFFECTIVE CHARGE, AND RECONSTRUCTION PATTERNS [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1976, 14 (04) :1623-1632

[2] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1974, 43 (02) :449-461

[3] MORPHOLOGICAL DEFECTS ARISING DURING MBE GROWTH OF GAAS [J].

BACHRACH, RZ ;

KRUSOR, BS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :756-764

[4] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J].

BACHRACH, RZ ;

BAUER, RS ;

CHIARADIA, P ;

HANSSON, GV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :335-343

[5] SURFACE PHASES OF GAAS(100) AND ALAS(100) [J].

BACHRACH, RZ ;

BAUER, RS ;

CHIARADIA, P ;

HANSSON, GV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :797-801

[6]

BACHRACH RZ, 1980, CRYST GROWTH, pCH6

[7]

BACHRACH RZ, 1978, J VAC SCI TECHNOL, V15, P756

[8]

BRINGANS RD, UNPUB

[9] EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1978, 33 (12) :1020-1022

[10] ORIGINS OF (111) SURFACE RECONSTRUCTIONS OF SI AND GE [J].

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :989-992

← 1 2 →