REACTIVE ION ETCHING-INDUCED DAMAGE IN INALAS/INGAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS PROCESSED IN HBR PLASMA

[1] SELECTIVE REACTIVE ION ETCHING OF INGAAS/INALAS HETEROSTRUCTURES IN HBR PLASMA [J]. APPLIED PHYSICS LETTERS, 1993, 62 (22) : 2830 - 2832

[2] INALAS/INGAAS HETEROSTRUCTURE FETS PROCESSED WITH SELECTIVE REACTIVE-ION-ETCHING GATE-RECESS TECHNOLOGY [J]. IEEE ELECTRON DEVICE LETTERS, 1993, 14 (09) : 425 - 427

[3] CHARACTERISTICS OF SELECTIVE REACTIVE ION ETCHING OF INGAAS/INALAS HETEROSTRUCTURES USING HBR PLASMA [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2258 - 2261

[4] DEPTH DISTRIBUTION OF REACTIVE ION ETCHING-INDUCED DAMAGE IN INALAS INGAAS HETEROSTRUCTURES EVALUATED BY HALL MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1994, 64 (22) : 2979 - 2981

[5] 1.3 MU-M INGAAS MSM PHOTODETECTOR WITH ABRUPT INGAAS/ALINAS INTERFACE [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (06) : 532 - 534

[6] I/V ANOMALITY AND DEVICE PERFORMANCE OF SUBMICROMETER-GATE GA0.47IN0.53AS/AL0.48IN0.52AS HEMT [J]. ELECTRONICS LETTERS, 1988, 24 (25) : 1571 - 1572

[7] HIGHLY UNIFORM N-INALAS/INGAAS HEMTS ON A 3-IN INP SUBSTRATE USING PHOTOCHEMICAL SELECTIVE DRY RECESS ETCHING [J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (02) : 105 - 107

[8] LAUTERBACH C, 1991, INDIUM PHOSPHIDE AND RELATED MATERIALS : THIRD INTERNATIONAL CONFERENCE, VOLS 1 AND 2, P610, DOI 10.1109/ICIPRM.1991.147450

[9] MICROWAVE PERFORMANCE OF A1INAS-GAINAS HEMTS WITH 0.2-MU-M AND 0.1-MU-M GATE LENGTH [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) : 647 - 649

[10] 50-NM SELF-ALIGNED-GATE PSEUDOMORPHIC ALINAS GAINAS HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) : 2007 - 2014

[1] SELECTIVE REACTIVE ION ETCHING OF INGAAS/INALAS HETEROSTRUCTURES IN HBR PLASMA [J]. APPLIED PHYSICS LETTERS, 1993, 62 (22) : 2830 - 2832

[2] INALAS/INGAAS HETEROSTRUCTURE FETS PROCESSED WITH SELECTIVE REACTIVE-ION-ETCHING GATE-RECESS TECHNOLOGY [J]. IEEE ELECTRON DEVICE LETTERS, 1993, 14 (09) : 425 - 427

[3] CHARACTERISTICS OF SELECTIVE REACTIVE ION ETCHING OF INGAAS/INALAS HETEROSTRUCTURES USING HBR PLASMA [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2258 - 2261

[4] DEPTH DISTRIBUTION OF REACTIVE ION ETCHING-INDUCED DAMAGE IN INALAS INGAAS HETEROSTRUCTURES EVALUATED BY HALL MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1994, 64 (22) : 2979 - 2981

[5] 1.3 MU-M INGAAS MSM PHOTODETECTOR WITH ABRUPT INGAAS/ALINAS INTERFACE [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (06) : 532 - 534

[6] I/V ANOMALITY AND DEVICE PERFORMANCE OF SUBMICROMETER-GATE GA0.47IN0.53AS/AL0.48IN0.52AS HEMT [J]. ELECTRONICS LETTERS, 1988, 24 (25) : 1571 - 1572

[7] HIGHLY UNIFORM N-INALAS/INGAAS HEMTS ON A 3-IN INP SUBSTRATE USING PHOTOCHEMICAL SELECTIVE DRY RECESS ETCHING [J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (02) : 105 - 107

[8] LAUTERBACH C, 1991, INDIUM PHOSPHIDE AND RELATED MATERIALS : THIRD INTERNATIONAL CONFERENCE, VOLS 1 AND 2, P610, DOI 10.1109/ICIPRM.1991.147450

[9] MICROWAVE PERFORMANCE OF A1INAS-GAINAS HEMTS WITH 0.2-MU-M AND 0.1-MU-M GATE LENGTH [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) : 647 - 649

[10] 50-NM SELF-ALIGNED-GATE PSEUDOMORPHIC ALINAS GAINAS HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) : 2007 - 2014