MUCH IMPROVED INTERFACES IN GAAS/ALAS QUANTUM-WELLS GROWN ON (411)A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

SHIMOMURA, S

SHINOHARA, K

KITADA, T

HIYAMIZU, S

TSUDA, Y

SANO, N

ADACHI, A

OKAMOTO, Y

机构：

[1] OSAKA UNIV, EXTREME MAT RES CTR, TOYONAKA, OSAKA 560, JAPAN

[2] KWANSEI GAKUIN UNIV, FAC SCI, NISHINOMIYA, HYOGO 662, JAPAN

[3] NISSHIN ELECT CO LTD, UKYO KU, KYOTO 615, JAPAN

[4] KUBOTA CORP, RES HEADQUARTERS, AMAGASAKI, HYOGO 661, JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.588138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effectively atomically flat interfaces over a macroscopic area (200 μm φ) have been achieved in GaAs/AlAs quantum wells (QWs) with well widths of 4.8 to 12 nm grown on (411)A GaAs substrates by molecular-beam epitaxy (MBE). A single and very narrow photoluminescence peak (FWHM)=7.7 meV) was observed at 742.6 nm for the QW with a well width of 4.8 nm at 77 K. The linewidth is comparable to that of growth-interrupted QWs grown on (100)-oriented GaAs substrates by MBE. These results indicate that the surface of GaAs and AlAs grown on the (411)A GaAs substrates are extremely flat and stable on the (411)A plane.

引用

页码：696 / 698

页数：3

共 6 条

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