EVAPORATED METAL-FILMS AS SUBSTRATES FOR HYDROGENATED AMORPHOUS-SILICON

被引：3

作者：

ISHIHARA, S

机构：

来源：

THIN SOLID FILMS | 1989年 / 182卷

关键词：

D O I：

10.1016/0040-6090(89)90258-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：229 / 236

页数：8

共 9 条

[1]

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[2]

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[4]

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[5] INTERACTION BETWEEN N-TYPE AMORPHOUS HYDROGENATED SILICON FILMS AND METAL-ELECTRODES [J].

ISHIHARA, S ;

HIRAO, T ;

MORI, K ;

KITAGAWA, M ;

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[6]

ISHIHARA S, 1987, J APPL PHYS, V62, P839

[7] DEPTH PROFILE MEASUREMENTS OF ALUMINUM FILM ON PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON LAYERS BY AUGER-ELECTRON SPECTROSCOPY [J].

ISHIHARA, SI ;

HIRAO, T .

THIN SOLID FILMS, 1987, 155 (02) :325-329

[8] INTERACTION OF HYDROGENATED AMORPHOUS-SILICON FILMS WITH TRANSPARENT CONDUCTIVE FILMS [J].

KITAGAWA, M ;

MORI, K ;

ISHIHARA, S ;

OHNO, M ;

HIRAO, T ;

YOSHIOKA, Y ;

KOHIKI, S .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3269-3271

[9] STUDY ON IMPURITY DIFFUSION IN THE GLOW-DISCHARGED HYDROGENATED AMORPHOUS-SILICON [J].

MATSUMURA, H ;

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FURUKAWA, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :517-520

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