DEPENDENCE OF ELECTRON-TEMPERATURE ON WELL WIDTH IN THE AL0.48IN0.52AS/GA0.47IN0.53AS SINGLE-QUANTUM WELL

被引：12

作者：

SHUM, K ^{[1
]}

HO, PP ^{[1
]}

ALFANO, RR ^{[1
]}

WELCH, DF ^{[1
]}

WICKS, GW ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV, SCH ELECT ENGN, NATL RES & RESOURCE FACIL SUBMICRON STRUCT, ITHACA, NY 14853 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 09期

关键词：

D O I：

10.1109/JQE.1986.1073177

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1811 / 1815

页数：5

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