GROWTH OF SEMIINSULATING INGAASP ALLOYS USING LOW-PRESSURE MOCVD

被引：4

作者：

KNIGHT, DG

MOORE, WT

BRUCE, RA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90483-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Semi-insulating Fe-doped InGaAsP alloys of lambda = 1.0, 1.15, 1.35 and 1.55 mum wavelength compositions lattice matched to InP have been grown and characterized for the first time. The resistivity is maximum for lambda = 1.0 mum InGaAsP at a value of 1 x 10(8) OMEGA cm, and decreases exponentially with the arsenic mole fraction for the longer waveLength alloys. The solubiliTy of Fe in the InGaAsP is fixed at the InP solubility value of 5x10(16) cm-3 at 630-degrees-C until phosphorus is eliminated from the alloy lattice. Diffusion of Fe in InGaAsP is noted, where the diffusion tendency increases with the arsenic mole fraction. Limiting the total Fe concentration to the solubility limit of Fe in InGaAsP greatly reduces diffusion of Fe.

引用

页码：352 / 357

页数：6

共 9 条

[1] LOW-PRESSURE MOCVD GROWTH OF BURIED HETEROSTRUCTURE LASER WAFERS USING HIGH-QUALITY SEMIINSULATING INP [J].