FE ACCEPTOR LEVEL IN IN1-XGAXASYP1-Y/INP

被引：17

作者：

SUGAWARA, M

KONDO, M

TAKANOHASHI, T

NAKAJIMA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.98828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：834 / 836

页数：3

共 20 条

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SMITH, AW ;

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[4] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS [J].

FORREST, SR ;

SCHMIDT, PH ;

WILSON, RB ;

KAPLAN, ML .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1199-1201

[5]

HENNEL AM, 1985, GAAS RELATED COMPOUN, P43

[6]

Iseler G. W., 1979, Gallium Arsenide and Related Compounds 1978, P144

[7]

ISOZUMI S, UNPUB

[8]

KONDO M, 1986, 18TH C SOL STAT DEV, P627

[9]

KONDO M, IN PRESS J ELECTRON

[10] OPTICAL AND ESR ANALYSIS OF FE ACCEPTOR IN INP [J].

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KAUFMANN, U ;

BISHOP, SG .

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