RHEED OSCILLATION AND SURFACE-DIFFUSION LENGTH ON GAAS(111)B SURFACE

被引：21

作者：

SHITARA, T

KONDO, E

NISHINAGA, T

机构：

[1] Department of Electronic Engineering, Faculty of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, 113

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90577-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

An experimental study of RHEED intensity oscillations was systematically made with (111)B substrates which were 1°- or 2° -misoriented toward the [110], [211], or [211] orientation. The behaviour of the RHEED oscillations on GaAs (111)B is similar to that on GaAs(001). However, the temperature at which the RHEED intensity oscillation begins to appear on GaAs(111)B is lower than that on GaAs(001). The surface diffusion length of gallium on GaAs(111)B was evaluated by taking account of the supersaturation ratio of adatoms on the terrace. © 1990.

引用

页码：530 / 534

页数：5

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