ELECTRON-BEAM DIRECT WRITING TECHNOLOGIES FOR 0.3-MU-M ULSI DEVICES

Electron beam direct writing technologies for 0.3-mu-m devices are studied in this paper. In order to prevent charging effects, TQV, which is a varnish consisting of 7,7,8,8-tetracyano quino dimethane complex salt, has been coated on the top layer of a trilayer resist system. The effectiveness of TQV coating is indicated by the experimental results obtained from test patterns. A proximity effect correction system with several strategies to reduce the correction time and output data volume has been developed. These technologies have been adopted for the fabrication of ULSI circuit patterns with the dimension of about 0.3 mu-m. The calculation time and the output data volume of a proximity effect correction are reduced considerably by using new methods. It is revealed that 0.3-mu-m ULSI patterns can be precisely fabricated by these new technologies.