ELECTRICAL-CONDUCTION MODEL FOR POLYCRYSTALLINE SILICON UNDER ILLUMINATION

被引：1

作者：

JOSHI, DP

SRIVASTAVA, RS

机构：

来源：

SOLAR ENERGY MATERIALS | 1984年 / 11卷 / 1-2期

关键词：

D O I：

10.1016/0165-1633(84)90031-5

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：97 / 103

页数：7

共 14 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2] THE PHOTOCONDUCTIVITY OF POLYCRYSTALLINE SEMICONDUCTORS [J].

CARD, HC .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3671-3673

[3] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J].

CARD, HC ;

YANG, ES .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :397-402

[4] THEORY OF THE ELECTRICAL AND PHOTO-VOLTAIC PROPERTIES OF POLYCRYSTALLINE SILICON [J].

GHOSH, AK ;

FISHMAN, C ;

FENG, T .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :446-454

[5] EFFECT OF GRAIN-SIZE ON THE RESISTIVITY OF POLYCRYSTALLINE MATERIAL [J].

JOSHI, DP ;

SEN, K .

SOLAR CELLS, 1983, 9 (04) :261-267

[6]

JOSHI DP, 1984, 3RD P NAT SEM PHYS S

[7] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&

[8]

LU NCC, 1981, ELECTRON DEVIC LETT, V2, P95, DOI 10.1109/EDL.1981.25354

[9] MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J].

LU, NCC ;

GERZBERG, L ;

LU, CY ;

MEINDL, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :818-830

[10] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .1. THEORY [J].

MANDURAH, MM ;

SARASWAT, KC ;

KAMINS, TI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1163-1171

← 1 2 →