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CHARACTERISTICS OF INJECTING POINT CONTACTS ON SEMICONDUCTORS .2. UNDER ILLUMINATION

被引：1
作者：
BRAUN, I
HENISCH, HK
机构：
来源：
SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 11-1期
关键词：
D O I：
10.1016/0038-1101(66)90135-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1111 / &
相关论文
共 5 条
[1]   THEORY OF THE FORWARD CHARACTERISTIC OF INJECTING POINT CONTACTS [J].
BANBURY, PC .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (406) :833-840
[2]   THEORY OF RELATION BETWEEN HOLE CONCENTRATION AND CHARACTERISTICS OF GERMANIUM POINT CONTACTS [J].
BARDEEN, J .
BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04) :469-495
[3]   CHARACTERISTICS OF INJECTING POINT CONTACTS ON SEMICONDUCTORS .I. IN DARKNESS [J].
BRAUN, I ;
HENISCH, HK .
SOLID-STATE ELECTRONICS, 1966, 9 (10) :981-&
[4]  
HENISCH HK, 1957, RECTIFYING SEMICONDU, P244
[5]   THEORY OF THE FLOW OF ELECTRONS AND HOLES IN GERMANIUM AND OTHER SEMICONDUCTORS [J].
VANROOSBROECK, W .
BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04) :560-607
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