1ST-PRINCIPLES CALCULATIONS OF ATOMIC AND ELECTRONIC-STRUCTURE OF THE GAAS(110) SURFACE

被引：116

作者：

QIAN, GX ^{[1
]}

MARTIN, RM ^{[1
]}

CHADI, DJ ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.37.1303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1303 / 1307

页数：5

共 42 条

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