INTERFACIAL STABILITY OF SNO2/N-SI AND IN2O3-SN/N-SI HETEROJUNCTION SOLAR-CELLS

被引：25

作者：

MARUSKA, HP

GHOSH, AK

EUSTACE, DJ

FENG, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2489 / 2494

页数：6

共 18 条

[1] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].

ASPNES, DE ;

THEETEN, JB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1359-1365

[2] ELECTRON-SPIN-RESONANCE STUDIES OF THERMALLY OXIDIZED SILICON-WAFERS [J].

BRUNSTROM, C ;

SVENSSON, C .

SOLID STATE COMMUNICATIONS, 1981, 37 (05) :399-404

[3]

CAPLAN PJ, 1982, J APPL PHYS, V53, P591

[4] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[5] STRUCTURE, PHOTO-VOLTAIC PROPERTIES, AND ANGLE-OF-INCIDENCE CORRELATIONS OF ELECTRON-BEAM-DEPOSITED SNO2-IN-SI SOLAR-CELLS [J].

FENG, T ;

GHOSH, AK ;

FISHMAN, C .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :8070-8074

[6] SPRAY-DEPOSITED HIGH-EFFICIENCY SNO2LN-SI SOLAR-CELLS [J].

FENG, T ;

GHOSH, AK ;

FISHMAN, C .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :266-268

[7]

FENG T, 1982, 16TH P IEEE PHOT SPE

[8] STABILITY OF SNO2-N-SI SOLAR-CELLS [J].

FISHMAN, C ;

GHOSH, AK ;

FENG, T .

SOLAR ENERGY MATERIALS, 1979, 1 (1-2) :181-185

[9]

FISHMAN C, 1978, DEC INT EL DEV M WAS, P93

[10] SNO2-SI SOLAR-CELLS - HETEROSTRUCTURE OR SCHOTTKY-BARRIER OR MIS-TYPE DEVICE [J].

GHOSH, AK ;

FISHMAN, C ;

FENG, T .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3490-3498

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