TEMPERATURE-DEPENDENCE OF THE FUNDAMENTAL ENERGY-GAP IN GAAS

被引:63
作者
KIM, CK [1 ]
LAUTENSCHLAGER, P [1 ]
CARDONA, M [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
关键词
D O I
10.1016/0038-1098(86)90632-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:797 / 802
页数:6
相关论文
共 35 条
[1]  
ALLEN PB, 1981, PHYS REV B, V24, P7479, DOI 10.1103/PhysRevB.24.7479
[2]   THEORY OF TEMPERATURE-DEPENDENCE OF ELECTRONIC BAND STRUCTURES [J].
ALLEN, PB ;
HEINE, V .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (12) :2305-2312
[3]   THEORY OF THE TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF GERMANIUM [J].
ALLEN, PB ;
CARDONA, M .
PHYSICAL REVIEW B, 1981, 23 (04) :1495-1505
[4]   TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF SI AND GE [J].
ALLEN, PB ;
CARDONA, M .
PHYSICAL REVIEW B, 1983, 27 (08) :4760-4769
[5]   SOLIDS WITH THERMAL OR STATIC DISORDER .1. ONE-ELECTRON PROPERTIES [J].
ALLEN, PB .
PHYSICAL REVIEW B, 1978, 18 (10) :5217-5224
[6]  
Antoncik E., 1955, CZECH J PHYS, V5, P449
[7]   TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].
CAMASSEL, J ;
AUVERGNE, D .
PHYSICAL REVIEW B, 1975, 12 (08) :3258-3267
[8]   TEMPERATURE-DEPENDENCE OF BAND-GAP AND COMPARISON WITH THRESHOLD FREQUENCY OF PURE GAAS LASERS [J].
CAMASSEL, J ;
AUVERGNE, D ;
MATHIEU, H .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2683-2689
[9]   SOLIDS WITH THERMAL OR STATIC DISORDER .2. OPTICAL-PROPERTIES [J].
CHAKRABORTY, B ;
ALLEN, PB .
PHYSICAL REVIEW B, 1978, 18 (10) :5225-5235
[10]   CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, J ;
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 8 (06) :2786-2794