ALGAINAS/ALGAAS SSQW GRINSCH LASERS FOR THE WAVELENGTH REGION BETWEEN 800 AND 870 NM

被引：3

作者：

BUYDENS, L

DEMEESTER, P

VANACKERE, M

VANDAELE, P

机构：

[1] University of Gent-IMEC, Laboratory for Electromagnetism and Acoustics, B-9000, Gent

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 08期

关键词：

SEMICONDUCTOR LASERS; SEMICONDUCTOR GROWTH; LASERS AND LASER APPLICATIONS;

D O I：

10.1049/el:19910388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A semiconductor laser is proposed which has an optical active region consisting of an 8 nm thick Al0.20Ga0.65In0.15As / Al0.20Ga0.80As strained single quantum well. The spectral emission peak of this quantum well is situated between 814 and 818 nm. The optical confinement is achieved using a standard graded refractive index separate confinement heterostructure optimised for the emission wavelength of the quantum well. Preliminary results show these lasers to have a threshold current of 18 mA.

引用

页码：618 / 620

页数：3

共 6 条

[1]

BUYDENS L, IN PRESS

[2]

KATSUYAMA T, I PHYS C SER, V112, P545

[3] OPTIMIZED GROWTH OF GRIN-SCH QUANTUM WELL LASERS BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].