POLISH-INDUCED DAMAGE IN (100) GAAS - A COMPARISON OF TRANSMISSION ELECTRON-MICROSCOPY AND RAMAN-SPECTROSCOPY

被引：6

作者：

GEORGE, T

WEBER, ZL

WEBER, ER

POLLAK, FH

机构：

[1] CUNY GRAD SCH & UNIV CTR,NEW YORK,NY 10036

[2] CUNY,GRAD SCH,NEW YORK,NY 10036

[3] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210

[4] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.344928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This communication presents a comparative study of polish-induced effects in 〈100〉 GaAs by Raman spectroscopy (strain) and cross-sectional transmission electron microscopy (dislocation density). It is found that the depth and polish-time dependence of both the strain and dislocation density obey the same relationship. However, the skin depth evaluated by Raman scattering is a factor of 10 smaller than that determined from transmission electron microscopy.

引用

页码：4363 / 4365

页数：3

共 4 条

[1]

BURNS G, 1987, SOLID STATE COMMUN, V39, P1137

[2] COMPREHENSIVE INVESTIGATION OF POLISH-INDUCED SURFACE STRAIN IN (100) AND (111) GAAS AND INP [J].