BANDWIDTH ENHANCED METAL-SEMICONDUCTOR-METAL PHOTODETECTORS BASED ON BACKGATED IP STRUCTURES

被引：14

作者：

GREGER, E ^{[1
]}

REINGRUBER, K ^{[1
]}

RIEL, P ^{[1
]}

DOHLER, GH ^{[1
]}

ROSENZWEIG, J ^{[1
]}

LUDWIG, M ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 17期

关键词：

D O I：

10.1063/1.112767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on theoretical and experimental results on a novel metal-semiconductor-metal (MSM) photodetector with a backgate provided by a p-doped layer. The backgate allows extremely short sweep-out times for the holes, due to strong electric fields normal to the surface. Thus, long tails due to slow moving holes and screening of the external drift fields by hole space charge accumulation at high optical power, which lead to a degradation of the time response of conventional MSM photodetectors, are avoided. The high frequency performance measured up to 8 GHz in the time and frequency domain showed a significant reduction of the bandwidth limiting hole tail compared to standard MSM photodetectors. (C) 1994 American Institute of Physics.

引用

页码：2223 / 2225

页数：3

共 10 条

[1] ULTRAFAST SEMIINSULATING INP-FE-INGAAS-FE-INP-FE MSM PHOTODETECTORS - MODELING AND PERFORMANCE [J].

BOTTCHER, EH ;

KUHL, D ;

HIERONYMI, F ;

DROGE, E ;

WOLF, T ;

BIMBERG, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :2343-2357

[2] DOPING-INDUCED BANDWIDTH ENHANCEMENT IN METAL-SEMICONDUCTOR METAL PHOTODETECTORS [J].

BURROUGHES, JH ;

ROGERS, DL ;

ARJAVALINGAM, G ;

PETTIT, GD ;

GOORSKY, MS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (07) :657-659

[3]

CHOU SY, 1992, IEEE J QUANTUM ELECT, V28, P2359

[4] ULTRAFAST METAL-SEMICONDUCTOR-METAL PHOTODIODES FABRICATED ON LOW-TEMPERATURE GAAS [J].

KLINGENSTEIN, M ;

KUHL, J ;

NOTZEL, R ;

PLOOG, K ;

ROSENZWEIG, J ;

MOGLESTUE, C ;

HULSMANN, A ;

SCHNEIDER, J ;

KOHLER, K .

APPLIED PHYSICS LETTERS, 1992, 60 (05) :627-629

[5] TRANSIT-TIME LIMITED RESPONSE OF GAAS METAL-SEMICONDUCTOR-METAL PHOTODIODES [J].

KLINGENSTEIN, M ;

KUHL, J ;

ROSENZWEIG, J ;

MOGLESTUE, C ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1991, 58 (22) :2503-2505

[6]

LIM YC, 1968, IEEE T ELECTRON DEV, VED15, P173

[7] PICOSECOND PULSE RESPONSE CHARACTERISTICS OF GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS [J].

MOGLESTUE, C ;

ROSENZWEIG, J ;

KUHL, J ;

KLINGENSTEIN, M ;

LAMBSDORFF, M ;

AXMANN, A ;

SCHNEIDER, J ;

HULSMANN, A .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) :2435-2448

[8] INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS FOR LONG WAVELENGTH OPTICAL COMMUNICATIONS [J].

SOOLE, JBD ;

SCHUMACHER, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (03) :737-752

[9]

VONKAMIENSKI ES, 1993, OSA P ULTRAFAST ELEC

[10] MONTE-CARLO STUDY OF PHOTOGENERATED CARRIER TRANSPORT IN GAAS SURFACE SPACE-CHARGE FIELDS [J].

ZHOU, X ;

HSIANG, TY ;

MILLER, RJD .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) :3066-3073

← 1 →