THERMAL-CONDUCTIVITY OF ALPHA-SIH THIN-FILMS

被引：446

作者：

CAHILL, DG ^{[1
]}

KATIYAR, M ^{[1
]}

ABELSON, JR ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.50.6077

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermal conductivity of sputtered a-Si:H thin films for a hydrogen content of 1-20 % and a film thickness of 0.2-1.5 mum is determined in the temperature range 80-400 K using an extension of the 3w measurement technique. The reliability of the method is demonstrated on 1-mum-thick a-SiO2 thermally grown on Si. Scattering of phonons at the interface between the a-Si:H film and the substrate places a simple upper limit on the heat transport by long-wavelength phonons and facilitates the comparison of the experimental data to recent numerical solutions of a Kubo formula using harmonic vibrations.

引用

页码：6077 / 6081

页数：5

共 42 条

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