A CONDUCTIVITY MODULATED POLYSILICON THIN-FILM-TRANSISTOR

被引：7

作者：

KUMAR, A

SIN, JKO

WONG, M

POON, VMC

机构：

[1] Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Hong Kong, Clear Water Bay

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 11期

关键词：

D O I：

10.1109/55.468287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a novel high voltage Conductivity Modulated Thin-Film Transistor (CMTFT) fabricated using polycrystalline silicon, The transistor uses the idea of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance, Experimental on-state and off-state current-voltage characteristics of the CMTFT have been compared,vith those of the conventional offset drain device, Results show that the CMTFT has six times to more than three orders of magnitude higher on-state current handling capability for operating at drain voltages ranging from 15 V to 5 V while still maintaining low leakage current and providing even faster switching speed, The CMTFT devices can be fabricated using a low temperature process (620 degrees C) which is highly desirable for large area electronic applications.

引用

页码：521 / 523

页数：3

共 5 条

[1]

Hack M., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P252, DOI 10.1109/IEDM.1988.32804

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[3]

MAINS T, 1988, POLYCRYSTALLINE SILI

[4] CHARACTERISTICS OF OFFSET-STRUCTURE POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS [J].

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IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :23-25

[5] A HIGH-VOLTAGE POLYSILICON TFT WITH MULTIGATE STRUCTURES [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (01) :95-100

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