CHARACTERISTICS OF OFFSET-STRUCTURE POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS

被引：119

作者：

TANAKA, K

ARAI, H

KOHDA, S

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 01期

关键词：

D O I：

10.1109/55.20401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：23 / 25

页数：3

共 4 条

[1] ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS [J].

FOSSUM, JG ;

ORTIZCONDE, A ;

SHICHIJO, H ;

BANERJEE, SK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1878-1884

[2] EFFECTS OF GRAIN-BOUNDARY PASSIVATION ON THE CHARACTERISTICS OF PARA-CHANNEL MOSFETS IN LPCVD POLYSILICON [J].

MALHI, SDS ;

SHAH, RR ;

SHICHIJO, H ;

PINIZZOTTO, RF ;

CHEN, CE ;

CHATTERJEE, PK ;

LAM, HW .

ELECTRONICS LETTERS, 1983, 19 (23) :993-994

[3] CHARACTERIZATION OF POLYCRYSTALLINE SILICON MOS-TRANSISTORS AND ITS FILM PROPERTIES .1. [J].

ONGA, S ;

MIZUTANI, Y ;

TANIGUCHI, K ;

KASHIWAGI, M ;

SHIBATA, K ;

KOHYAMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1982, 21 (10) :1472-1478

[4] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J].

POLLACK, GP ;

RICHARDSON, WF ;

MALHI, SDS ;

BONIFIELD, T ;

SHICHIJO, H ;

BANERJEE, S ;

ELAHY, M ;

SHAH, AH ;

WOMACK, R ;

CHATTERJEE, PK .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :468-470

← 1 →