EFFECTS OF GRAIN-BOUNDARY PASSIVATION ON THE CHARACTERISTICS OF PARA-CHANNEL MOSFETS IN LPCVD POLYSILICON

被引：11

作者：

MALHI, SDS ^{[1
]}

SHAH, RR ^{[1
]}

SHICHIJO, H ^{[1
]}

PINIZZOTTO, RF ^{[1
]}

CHEN, CE ^{[1
]}

CHATTERJEE, PK ^{[1
]}

LAM, HW ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC, MAT SCI LAB, DALLAS, TX 75265 USA

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 23期

关键词：

D O I：

10.1049/el:19830674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：993 / 994

页数：2

共 8 条

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[8] CAPACITANCE VOLTAGE CHARACTERIZATION OF POLY SI-SIO2-SI STRUCTURES [J].

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FROHMANBENTCHKOWSKY, D .

SOLID-STATE ELECTRONICS, 1980, 23 (05) :433-439

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