CAPACITANCE VOLTAGE CHARACTERIZATION OF POLY SI-SIO2-SI STRUCTURES

被引：24

作者：

YARON, G ^{[1
]}

FROHMANBENTCHKOWSKY, D ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,JERUSALEM 91000,ISRAEL

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 05期

关键词：

D O I：

10.1016/0038-1101(80)90078-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：433 / 439

页数：7

共 16 条

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[4]

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[5] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[6]

HICKMOTT TH, UNPUBLISHED

[7]

MANY, 1965, SEMICONDUCTOR SURFAC, P60

[8]

PIERCE DT, 1971, PHY REV LETT, V17, P1217

[9]

SAH CT, 1972, PHYS STAT SOL A, V14, P297

[10] PROCESSING EFFECTS ON STEAM OXIDE HARDNESS [J].

SCHLESIER, KM ;

BENYON, CW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1599-1603

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