EXCITONIC POLARITONS IN ELECTRIC-FIELDS AT GAAS-SURFACES

被引:32
作者
SCHULTHEIS, L
LAGOIS, J
机构
来源
PHYSICAL REVIEW B | 1984年 / 29卷 / 12期
关键词
D O I
10.1103/PhysRevB.29.6784
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6784 / 6790
页数:7
相关论文
共 28 条
  • [21] EXCITONIC REFLECTANCE OF GAAS CRYSTALS CLEAVED IN LIQUID-HELIUM
    SCHULTHEIS, L
    BALSLEV, I
    [J]. PHYSICAL REVIEW B, 1983, 28 (04): : 2292 - 2295
  • [22] POLARITON REFLECTANCE AND PHOTOLUMINESCENCE IN HIGH-PURITY GAAS
    SELL, DD
    STOKOWSKI, SE
    DINGLE, R
    DILORENZO, JV
    [J]. PHYSICAL REVIEW B, 1973, 7 (10) : 4568 - 4586
  • [23] SELL DD, 1972, 11TH P INT C PHYS SE
  • [24] EXCITON REFLECTANCE AND PHOTOREFLECTANCE IN GAAS
    SHAY, JL
    NAHORY, RE
    [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (13) : 945 - &
  • [25] SPICER WL, 1975, J VAC SCI TECHNOL, V16, P1422
  • [26] MODEL OF THE EXCITONIC SURFACE-LAYER IN NORMAL INCIDENCE REFLECTION
    STAHL, A
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 106 (02): : 575 - 580
  • [27] STEWART HS, 1965, APPLIED OPTICS OPTIC, V1, P127
  • [28] 1973, CODATA B, V11, P7