THE IMPACT OF HIGH-SENSITIVITY RESIST MATERIALS ON X-RAY-LITHOGRAPHY

被引：11

作者：

SELIGSON, D ^{[1
]}

ITO, H ^{[1
]}

WILLSON, CG ^{[1
]}

机构：

[1] IBM CORP,ALMADEN RES CTR,DIV RES,SAN JOSE,CA 95120

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2268 / 2273

页数：6

共 18 条

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[2]

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[3]

ITO H, 1984, ACS SYM SER, V242, P11

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ITO, H ;

WILLSON, CG .

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[5] PLASMA-FOCUS X-RAY SOURCE FOR LITHOGRAPHY [J].

KATO, Y ;

OCHIAI, I ;

WATANABE, Y ;

MURAYAMA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :195-198

[6] X-RAY-LITHOGRAPHY FOR MICROFABRICATION [J].

MAYDAN, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1164-1168

[7] REDUCTION IN X-RAY-LITHOGRAPHY SHOT NOISE EXPOSURE LIMIT BY DISSOLUTION PHENOMENA [J].

NEUREUTHER, AR ;

WILLSON, CG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :167-173

[8]

NOVAK WT, 1983, ELECTRON BEAM XRAY I, V2, P106

[9]

PAN L, 1988, 5TH P C SYNCHR RAD I, P287

[10]

PETERS DW, 1988, ELECTRON BEAM SRAY I, V7, P28

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