MICROSCOPIC PHOTOLUMINESCENCE CHARACTERIZATION OF 1.3-MU-M INASP/INGAASP STRAINED MULTIQUANTUM WELLS AND LASER-DIODES

被引：10

作者：

NAKAO, M

OOHASHI, H

HIRONO, T

KAMADA, H

SUGIURA, H

机构：

[1] NTT Opto-electronics Laboratories, Wakamiya, Atsugi

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 05期

关键词：

D O I：

10.1063/1.359978

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents results of a microscopic photoluminescence (mu-PL) characterization of strained InAs0.5P0.5/InGaAsP multiquantum well (MQW) crystals with a series of well numbers (n=2-14). This method is useful in detecting misfit dislocations in the crystals, especially at the initial stage of their generation. The mu-PL intensity profile measurements of a laser diode (LD) cavity shows the intensity, being mainly influenced by the [0(1) over bar1$]-directed misfit dislocations, is closely correlated to the threshold current of the LD. (C) 1995 American Institute of Physics.

引用

页码：3462 / 3466

页数：5

共 14 条

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CHENG, AN ;

WIEDER, HH ;

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[3]

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[4] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].