CHARACTERIZATION OF INGAASP INP DOUBLE-HETEROSTRUCTURE WAFERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY FOR SEMICONDUCTOR-LASERS BY PHOTOLUMINESCENCE INVESTIGATION WITH HIGH-POWER YAG-LASER EXCITATION

被引：8

作者：

NAKAO, M

SATO, K

OISHI, M

ITAYA, Y

IMAMURA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.339908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1722 / 1728

页数：7

共 25 条

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