CHARACTERIZATION OF RADIATIVE EFFICIENCY IN DOUBLE HETEROSTRUCTURES OF INGAASP/INP BY PHOTOLUMINESCENCE INTENSITY ANALYSIS

被引：4

作者：

KOMIYA, S

YAMAGUCHI, A

UMEBU, I

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 02期

关键词：

D O I：

10.1016/0038-1101(86)90044-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：235 / 240

页数：6

共 16 条

[1] PHASE-EQUILIBRIA AND VAPOR-PRESSURES OF PURE PHOSPHORUS AND OF INDIUM-PHOSPHORUS SYSTEM AND THEIR IMPLICATIONS REGARDING CRYSTAL-GROWTH OF INP [J].

BACHMANN, KJ ;

BUEHLER, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :835-846

[2] MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF VAPOR-PHASE GROWTH OF IN(1-X)GAXP [J].

BANS, VS ;

ETTENBERG, M .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (06) :1119-1129

[3] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS [J].

FARROW, RFC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) :2436-2448

[4]

GROVES SH, 1984, J CRYST GROWTH, V54, P81

[5]

JONSTON WD, 1978, APPL PHYS LETT, V33, P992

[6] EFFECT OF AN INP BUFFER LAYER ON PHOTOLUMINESCENCE EFFICIENCY OF AN INGAASP LAYER [J].

KOMIYA, S ;

UMEBU, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (02) :166-167

[7] STUDIES OF PHOTOLUMINESCENCE INTENSITY IN THE INP INGAASP INP DOUBLE HETEROSTRUCTURE [J].

KOMIYA, S ;

YAMAGUCHI, A ;

UMEBU, I ;

KOTANI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (03) :308-311

[8]

NAKANO Y, 1981, I PHYS PHYS C INT S, P71

[9] MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS [J].

NELSON, RJ ;

SOBERS, RG .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :6103-6108

[10]

PANISH MB, 1974, J CRYST GROWTH, V27, P6, DOI 10.1016/S0022-0248(74)80046-1

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