STUDIES OF PHOTOLUMINESCENCE INTENSITY IN THE INP INGAASP INP DOUBLE HETEROSTRUCTURE

被引：8

作者：

KOMIYA, S

YAMAGUCHI, A

UMEBU, I

KOTANI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 03期

关键词：

D O I：

10.1143/JJAP.23.308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：308 / 311

页数：4

共 10 条

[1] INTERFACIAL RECOMBINATION AT (ALGA)AS-GAAS HETEROJUNCTION STRUCTURES [J].

ETTENBERG, M ;

KRESSEL, H .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1538-1544

[2]

NAKANO Y, 1981, 1981 I PHYS C GALL A, P71

[3] MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS [J].

NELSON, RJ ;

SOBERS, RG .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :6103-6108

[4]

NELSON RJ, 1981, APPL PHYS LETT, V32, P174

[5] HOT-CARRIER EFFECTS IN 1.3-MU IN1-XGAXASYP1-Y LIGHT-EMITTING-DIODES [J].

SHAH, J ;

LEHENY, RF ;

NAHORY, RE ;

TEMKIN, H .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :618-620

[6] TEMPERATURE-DEPENDENCE OF PHOTO-LUMINESCENCE OF NORMAL-INGAASP [J].

TEMKIN, H ;

KERAMIDAS, VG ;

POLLACK, MA ;

WAGNER, WR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1574-1578

[7] HIGH RADIANCE INGAASP-INP LENSED LEDS FOR OPTICAL COMMUNICATION-SYSTEMS AT 1.2-1.3 MU-M [J].

WADA, O ;

YAMAKOSHI, S ;

ABE, M ;

NISHITANI, Y ;

SAKURAI, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :174-178

[8] LOW THRESHOLD 1.55 MU-M INGAASP LASERS DOUBLE CLAD WITH INGAASP CONFINING LAYERS [J].

WESTBROOK, LD ;

NELSON, AW ;

HATCH, CB .

ELECTRONICS LETTERS, 1981, 17 (25-2) :952-954

[9]

WILLARDSON RK, 1971, SEMICONDUCTORS SEMIM, V8, P213

[10] PHOTO-LUMINESCENCE INTENSITY IN INGAASP INP DOUBLE-HETEROSTRUCTURES [J].

YAMAGUCHI, A ;

KOMIYA, S ;

UMEBU, I ;

WADA, O ;

AKITA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (05) :L297-L299

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