DISLOCATION RELAXATION IN INASYP1-Y FILMS DEPOSITED ONTO (001) INP BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：15

作者：

OKADA, T ^{[1
]}

KRUZELECKY, RV ^{[1
]}

WEATHERLY, GC ^{[1
]}

THOMPSON, DA ^{[1
]}

ROBINSON, BJ ^{[1
]}

机构：

[1] MCMASTER UNIV,CTR ELECTROPHOTON MAT & DEVICES,HAMILTON L8S 4L7,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 23期

关键词：

D O I：

10.1063/1.110196

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The strain relaxation of InAsyP1-y layers grown on (001) InP substrates by gas-source molecular beam epitaxy was examined using transmission electron microscopy (TEM) and cathodoluminescence (CL) imaging. InAsyP1-y films with a thickness of 190 angstrom were prepared, systematically varying the As content from y=0.30 and 0.77, corresponding to a lattice mismatch between 0.97% and 2.5%. Relaxation was anisotropic, with 60-degrees misfit dislocations lying predominantly along [110BAR], with a much lower density of dislocations along [110]. For y > 0.48, CL and plan-view TEM observations show slip traces which make angles of about +/- 40-degrees with the [110BAR] direction. These slip traces correspond to pure-screw dislocation segments (gliding on {111}) cross slipping to glide on planes approximately parallel to {011}.

引用

页码：3194 / 3196

页数：3

共 19 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].

ADAMS, AR .

ELECTRONICS LETTERS, 1986, 22 (05) :249-250

[2] DISLOCATION GLIDE IN (110) PLANES IN SEMICONDUCTORS WITH DIAMOND OR ZINCBLENDE STRUCTURE [J].

ALBRECHT, M ;

STRUNK, HP ;

HULL, R ;

BONAR, JM .

APPLIED PHYSICS LETTERS, 1993, 62 (18) :2206-2208

[3]

ALBRECHT M, 1992, P MATER RES SOC, V238, P79

[4] OBSERVATIONS OF NEW MISFIT DISLOCATION CONFIGURATIONS AND SLIP SYSTEMS AT ULTRAHIGH STRESSES IN THE (AL)GAAS/INXGA1-XAS/GAAS(100) SYSTEM [J].

BONAR, JM ;

HULL, R ;

WALKER, JF ;

MALIK, R .

APPLIED PHYSICS LETTERS, 1992, 60 (11) :1327-1329

[5]

BONAR JM, 1990, P MATER RES SOC, V160, P117

[6] THE ACCOMMODATION OF MISFIT AT (100) HETEROJUNCTIONS IN III-V-COMPOUND SEMICONDUCTORS BY GLIDING DISSOCIATED DISLOCATIONS [J].

DECOOMAN, BC ;

CARTER, CB .

ACTA METALLURGICA, 1989, 37 (10) :2765-2777

[7]

DYNNA M, UNPUB

[8]

EHRENREICH H, 1959, PHYS CHEM SOLIDS, V12, P97

[9] DISLOCATION MECHANISMS OF RELAXATION IN STRAINED EPITAXIAL-FILMS [J].

FREUND, LB .

MRS BULLETIN, 1992, 17 (07) :52-60

[10]

HIRSCH P, 1977, ELECT MICROSCOPY THI, P176

← 1 2 →