A STUDY OF SHALLOW AND DEEP DAMAGE IN CU AND AL AFTER SELF-IMPLANTATION

被引:8
作者
LINDGREEN, RJT [1 ]
BOERMA, DO [1 ]
DEHOSSON, JTM [1 ]
机构
[1] STATE UNIV GRONINGEN,CTR MAT SCI,DEPT APPL PHYS,9747 AG GRONINGEN,NETHERLANDS
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1983年 / 71卷 / 3-4期
关键词
D O I
10.1080/00337578308218619
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
引用
收藏
页码:289 / 314
页数:26
相关论文
共 49 条
[1]   DETERMINATION OF NATURE OF DEFECT CLUSTERS IN IRRADIATED METALS BY RUTHERFORD BACKSCATTERING [J].
AGRAWAL, MK ;
SOOD, DK .
NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :425-427
[2]  
Anderson H. H., 1977, HYDROGEN STOPPING PO
[3]   VACANCY DEFECT MOBILITIES AND BINDING-ENERGIES OBTAINED FROM ANNEALING STUDIES [J].
BALLUFFI, RW .
JOURNAL OF NUCLEAR MATERIALS, 1978, 69-7 (1-2) :240-263
[4]  
Basinski S. J., 1979, Dislocations in solids, vol.IV. Dislocations in metallurgy, P261
[5]   DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].
BOGH, E .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&
[6]   LATTICE THEORY OF POINT-DEFECTS [J].
DEDERICHS, PH ;
LEHMANN, C ;
SCHOBER, HR ;
SCHOLZ, A ;
ZELLER, R .
JOURNAL OF NUCLEAR MATERIALS, 1978, 69-7 (1-2) :176-199
[7]   INFLUENCE OF IRRADIATION TEMPERATURE ON SELF-ION DAMAGE IN COPPER [J].
ENGLISH, CA ;
EYRE, BL ;
SUMMERS, J .
PHILOSOPHICAL MAGAZINE, 1976, 34 (04) :603-614
[8]  
Fletcher J., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P421
[9]   DEPTH PROFILING OF EXTENDED DEFECTS IN SILICON BY RUTHERFORD BACKSCATTERING MEASUREMENTS [J].
GRUSKA, B ;
GOTZ, G .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (01) :129-139
[10]   DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED SI [J].
GRUSKA, B ;
GOTZ, G .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 59 (3-4) :157-167