DEPTH PROFILING OF EXTENDED DEFECTS IN SILICON BY RUTHERFORD BACKSCATTERING MEASUREMENTS

被引:8
作者
GRUSKA, B [1 ]
GOTZ, G [1 ]
机构
[1] FRIEDRICH SCHILLER UNIV,SEKT PHYS,DDR-6900 JENA,GER DEM REP
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 67卷 / 01期
关键词
D O I
10.1002/pssa.2210670112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:129 / 139
页数:11
相关论文
共 14 条
[1]   QUANTITATIVE DEPTH DISTRIBUTION OF DISLOCATIONS BY PLANAR CHANNELING [J].
BAERI, P ;
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E ;
PICRAUX, ST .
PHYSICS LETTERS A, 1978, 68 (02) :244-246
[2]   DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].
BOGH, E .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&
[3]   CHANNELING ANALYSIS OF STACKING DEFECTS IN EPITAXIAL SI LAYERS [J].
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E ;
PICRAUX, ST .
NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :371-376
[4]  
CAMPISANO SU, 1977, 3 C ION BEAM AN GEOR
[5]  
EISEN FH, 1973, CHANNELING, pCH14
[6]  
GRUSKA B, UNPUBLISHED
[7]  
MAYER JW, 1971, ION IMPLANTATION SEM, pCH3
[8]  
Mory J., 1972, RADIAT EFF DEFECT S, V13, P57, DOI [10.1080/00337577208231161, DOI 10.1080/00337577208231161]
[9]   DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED AL [J].
PICRAUX, ST ;
RIMINI, E ;
FOTI, G ;
CAMPISANO, SU .
PHYSICAL REVIEW B, 1978, 18 (05) :2078-2096
[10]  
QUERE Y, 1970, ANN PHYS-PARIS, V5, P105