DEFECT CREATION AND DOPING OF P-TYPE IMPURITIES IN ZNS CRYSTALS

被引：6

作者：

TAGUCHI, T

YOKOGAWA, T

FUJITA, S

SATOH, M

INUISHI, Y

机构：

[1] KYOTO UNIV,FAC ENGN,KYOTO 606,JAPAN

[2] GOVT IND RES INST,IKEDA,OSAKA 563,JAPAN

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90299-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：503 / 507

页数：5

共 20 条

[1] CHANNELLING STUDIES OF ION IMPLANTATION INDUCED LATTICE DEFECTS IN ZINC TELLURIDE. [J].

Bontemps, A. ;

Ligeon, E. ;

Danielou, R. .

Radiation Effects, 1974, 22 (03) :195-204

[2]

BRYANT FJ, 1970, PHYS ST SOL A, P597

[3] ION-IMPLANTATION OF ZNS [J].

GEORGOBI.AN ;

KOTLJARE.MB ;

ZLOBIN, VN ;

TODUAL, PA ;

GENERALO.YP ;

DEMENTEV, BP .

MATERIALS RESEARCH BULLETIN, 1973, 8 (08) :893-897

[4]

GETTINGS M, 1970, J CRYSTAL GROWTH, V22, P50

[5]

Hoogenstraaten W., 1958, PHILIPS RES REP, V13, P515

[6] ELECTRON PARAMAGNETIC RESONANCE STUDIES OF ZNS-A AND -B CENTERS [J].

KASAI, PH ;

OTOMO, Y .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (06) :1263-&

[7]

KODA T, 1964, PHYS REV A, V136, P541

[8]

MASTURA K, 1975, J PHYS SOC JAPAN, V39, P383

[9] OPTICAL-ABSORPTION AND LATTICE-DEFECTS INDUCED BY NEUTRON-IRRADIATION AND HEAT-TREATMENT IN ZNS CRYSTALS [J].

MATSUURA, K ;

TSURUMI, I ;

TAKEDA, F .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 28 (01) :379-385

[10]

ODA S, 1979, J LUMINESCENCE, V18, P823

← 1 2 →