ORIENTATION DEPENDENT SHAPE OF THE P-N INTERFACE OF ALLOYED SILICON RECTIFIERS

被引：3

作者：

HOFFMANN, A

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(64)90125-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：101 / &

共 6 条

[1]

KELLER W, COMMUNICATION

[2] A DEVELOPMENTAL GERMANIUM P-N-P-JUNCTION TRANSISTOR [J].

LAW, RR ;

MUELLER, CW ;

PANKOVE, JI ;

ARMSTRONG, LD .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1352-1357

[3] AVALANCHE BREAKDOWN IN SILICON [J].

MCKAY, KG .

PHYSICAL REVIEW, 1954, 94 (04) :877-884

[4]

MUELLER CW, 1956, RCA REV, V17, P46

[5] SILICON P-N-JUNCTION ALLOY DIODES [J].

PEARSON, GL ;

SAWYER, B .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1348-1351

[6]

SIRTL E, 1961, Z METALLKD, V52, P529