NEAR-SINGLE CARRIER-TYPE MULTIPLICATION IN A MULTIPLE GRADED-WELL STRUCTURE FOR A SOLID-STATE PHOTOMULTIPLIER

被引：14

作者：

ALLAM, J

CAPASSO, F

ALAVI, K

CHO, AY

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 01期

关键词：

D O I：

10.1109/EDL.1987.26531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4 / 6

页数：3

共 7 条

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BRENNAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) :1683-1695

[3] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].

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[4] NEW AVALANCHE MULTIPLICATION PHENOMENON IN QUANTAM WILL SUPERLATTICES - EVIDENCE OF IMPACT IONIZATION ACROSS THE BAND-EDGE DISCONTINUITY [J].

CAPASSO, F ;

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APPLIED PHYSICS LETTERS, 1986, 48 (19) :1294-1296

[5] IMPACT IONIZATION ACROSS THE CONDUCTION-BAND-EDGE DISCONTINUITY OF QUANTUM-WELL HETEROSTRUCTURES [J].

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HESS, K .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2885-2894

[6] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS-ALXGA1-XAS SUPERLATTICES [J].

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APPLIED PHYSICS LETTERS, 1985, 47 (09) :972-974

[7]

ROBBINS DJ, 1980, PHYS STATUS SOLIDI B, V98, P11, DOI 10.1002/pssb.2220980102

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