学术探索
学术期刊
新闻热点
数据分析
智能评审

GROWTH OF EPITAXIAL LAYERS OF SILICON BY SUBLIMATION THROUGH THIN ALLOY ZONES

被引：15
作者：
FILBY, JD
NIELSEN, S
机构：
来源：
BRITISH JOURNAL OF APPLIED PHYSICS | 1966年 / 17卷 / 01期
关键词：
D O I：
10.1088/0508-3443/17/1/308
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：81 / &
相关论文
共 15 条
[1]   PROPERTIES OF GOLD-DOPED SILICON [J].
COLLINS, CB ;
CARLSON, RO ;
GALLAGHER, CJ .
PHYSICAL REVIEW, 1957, 105 (04) :1168-1173
[2]   LOW-TEMPERATURE EPITAXY OF SILICON BY SUBLIMATION ONTO THIN ALLOY LAYERS [J].
FILBY, JD ;
NIELSEN, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (05) :535-&
[3]   PROGRESS TOWARD SINGLE CRYSTAL SILICON FILMS ON AMORPHOUS SUBSTRATES [J].
FILBY, JD ;
NIELSEN, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) :957-&
[4]  
FILBY JD, 1965, P AIME C MATERIALS S
[5]  
FILBY JD, 1965, P NATO SUMMER SCH EP
[6]  
FILBY JD, IN PRESS
[7]  
FILBY JD, 1966, T METALL SOC AIME
[8]  
FILBY JD, 1965, P INT VACUUM C STUTT
[9]   CONSTITUTIONAL SUPERCOOLING DURING CRYSTAL GROWTH FROM STIRRED MELTS .1. THEORETICAL [J].
HURLE, DTJ .
SOLID-STATE ELECTRONICS, 1961, 3 (01) :37-44
[10]   SILICON WHISKER GROWTH AND EPITAXY BY VAPOUR-LIQUID-SOLID MECHANISM [J].
JAMES, DWF ;
LEWIS, C .
BRITISH JOURNAL OF APPLIED PHYSICS, 1965, 16 (08) :1089-&
12