THE INFLUENCE OF TMA AND SIH4 ON THE INCORPORATION RATE OF GA IN ALXGA1-XN CRYSTALS GROWN FROM TMG AND NH3

被引：34

作者：

SAYYAH, K

CHUNG, BC

GERSHENZON, M

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

[2] UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90089

来源：

关键词：

D O I：

10.1016/0022-0248(86)90333-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：424 / 429

页数：6

共 17 条

[1] GROWTH AND PROPERTIES OF ALXGA1-XN EPITAXIAL LAYERS
BARANOV, B
DAWERITZ, L
GUTAN, VB
JUNGK, G
NEUMANN, H
RAIDT, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (02): : 629 - 636
[2] CHUNG B, UNPUB
[3] CHUNG BC, 1986, THESIS U SO CALIFORN
[4] THE DEPOSITION OF SILICON FROM SILANE IN A LOW-PRESSURE HOT-WALL SYSTEM
CLAASSEN, WAP
BLOEM, J
VALKENBURG, WGJN
VANDENBREKEL, CHJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 259 - 266
[5] GROWTH AND PROPERTIES OF GAXAL1-XN COMPOUNDS
HAGEN, J
METCALFE, RD
WICKENDEN, D
CLARK, W
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (04): : L143 - L146
[6] PROPERTIES AND ION-IMPLANTATION OF ALXGA1-XN EPITAXIAL SINGLE-CRYSTAL FILMS PREPARED BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
KHAN, MA
SKOGMAN, RA
SCHULZE, RG
GERSHENZON, M
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 492 - 494
[7] LIU S, 1972, J ELECTROCHEM SOC, V119, P622
[8] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN
MARUSKA, HP
TIETJEN, JJ
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &
[9] MOCVD EPITAXIAL-GROWTH OF SINGLE-CRYSTAL GAN, A1N AND A1XGA1-XN
MATLOUBIAN, M
GERSHENZON, M
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (05) : 633 - 644
[10] MATLOUBIAN M, 1984, THESIS U SO CALIFORN