SEM ALLOYED AU-GE-NI OHMIC CONTACTS TO GAAS

被引:5
作者
NASSIBIAN, AG
KALKUR, TS
机构
来源
APPLICATIONS OF SURFACE SCIENCE | 1985年 / 22-3卷 / MAY期
关键词
D O I
10.1016/0378-5963(85)90236-3
中图分类号
学科分类号
摘要
引用
收藏
页码:1019 / 1026
页数:8
相关论文
共 13 条
[1]   MICROSTRUCTURE AND RESISTIVITY OF LASER-ANNEALED AU-GE OHMIC CONTACTS ON GAAS [J].
AINA, O ;
CHIANG, SW ;
LIU, YS ;
BACON, F ;
ROSE, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (10) :2183-2187
[2]   CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].
BERGER, HH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :507-&
[3]  
ECKHARDT E, 1980, LASER ELECTRON BEAM, P467
[4]  
ECKHARDT G, 1978, AIP C P, V50, P641
[5]  
GROVE AS, PHYSICS TECHNOLOGY S, P102
[6]  
HEIBLUM M, 1982, SOLID ST ELECTRON, V25, P499
[7]   THE ROLE OF GERMANIUM IN EVAPORATED AU-GE OHMIC CONTACTS TO GAAS [J].
ILIADIS, A ;
SINGER, KE .
SOLID-STATE ELECTRONICS, 1983, 26 (01) :7-&
[8]   THE CHARACTERISTICS OF AU-GE-BASED OHMIC CONTACTS TO N-GAAS INCLUDING THE EFFECTS OF AGING [J].
MARLOW, GS ;
DAS, MB ;
TONGSON, L .
SOLID-STATE ELECTRONICS, 1983, 26 (04) :259-&
[9]   LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS FROM AU-GE-NI MELTS [J].
OTSUBO, M ;
KUMABE, H ;
MIKI, H .
SOLID-STATE ELECTRONICS, 1977, 20 (07) :617-621
[10]   OHMIC CONTACTS TO III-V-COMPOUND SEMICONDUCTORS - A REVIEW OF FABRICATION TECHNIQUES [J].
PIOTROWSKA, A ;
GUIVARCH, A ;
PELOUS, G .
SOLID-STATE ELECTRONICS, 1983, 26 (03) :179-&