ANALYSIS OF CMOS TRANSISTOR INSTABILITIES

被引:65
作者
DIMITRIJEV, S
STOJADINOVIC, N
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D O I
10.1016/0038-1101(87)90090-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:991 / 1003
页数:13
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共 33 条
[1]   MONTE-CARLO ANALYSIS OF SENSITIVITY OF THRESHOLD VOLTAGE IN SMALL GEOMETRY MOSFETS [J].
ALVAREZ, AR ;
AKERS, LA .
ELECTRONICS LETTERS, 1982, 18 (01) :42-43
[2]   SIMPLE APPROACH FOR ACCURATELY MODELING THRESHOLD VOLTAGE OF SHORT-CHANNEL MOSTS [J].
BANDY, WR ;
KOKALIS, DP .
SOLID-STATE ELECTRONICS, 1977, 20 (08) :675-680
[3]   INFLUENCE OF IONIZING IRRADIATION ON THE CHANNEL MOBILITY OF MOS-TRANSISTORS [J].
BELLAOUAR, A ;
SARRABAYROUSE, G ;
ROSSEL, P .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (04) :184-186
[4]   EFFECT OF COULOMB SCATTERING ON SILICON SURFACE MOBILITY [J].
CHENG, YC ;
SULLIVAN, EA .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :187-192
[5]   MATHEMATICAL-MODELS FOR MARGINAL RELIABILITY-ANALYSIS [J].
CORSI, F .
MICROELECTRONICS AND RELIABILITY, 1983, 23 (06) :1087-1102
[6]  
DANG LM, 1977, SOLID STATE ELECTRON, V20, P825, DOI 10.1016/0038-1101(77)90171-X
[7]  
DAVIS JR, 1981, INSTABILITIES MOS DE
[8]  
FERRY DK, 1984, P INT ELECTRON DEV M, P605
[9]   MOS MODELING BY ANALYTICAL APPROXIMATIONS .1. SUB-THRESHOLD CURRENT AND THRESHOLD VOLTAGE [J].
FICHTNER, W ;
POTZL, HW .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 46 (01) :33-55
[10]   A SIMPLE-MODEL FOR SEPARATING INTERFACE AND OXIDE CHARGE EFFECTS IN MOS DEVICE CHARACTERISTICS [J].
GALLOWAY, KF ;
GAITAN, M ;
RUSSELL, TJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1497-1501