INFLUENCE OF IONIZING IRRADIATION ON THE CHANNEL MOBILITY OF MOS-TRANSISTORS

被引：5

作者：

BELLAOUAR, A

SARRABAYROUSE, G

ROSSEL, P

机构：

[1] CNRS, Lab d'Automatique et d'Analyse, des Systemes, Toulouse, Fr, CNRS, Lab d'Automatique et d'Analyse des Systemes, Toulouse, Fr

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1985年 / 132卷 / 04期

关键词：

CHANNEL MOBILITY - IONIZING RADIATION - MOS TRANSISTORS;

D O I：

10.1049/ip-i-1.1985.0040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：184 / 186

页数：3

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