MONTE-CARLO SIMULATION OF NOISE IN GAAS AT ELECTRIC-FIELDS UP TO THE CRITICAL-FIELD

被引：6

作者：

ADAMS, JG ^{[1
]}

TANG, TW ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,DEPT ELECT & COMP ENGN,AMHERST,MA

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.192761

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monte-Carlo (MC) noise calculations using a method based on the Ramo-Shockley theorem have been carried out for n-type homogeneous GaAs under a variety of conditions. Classical Nyquist noise results have been reproduced for resistors at both 77 and 300 K. The method has also been used to model noise at 300 K at fields up to the critical field, and the results compare favorably with experiments. An alternative method for determining the intervalley coupling constant by using noise temperature data is described, and the results using this method suggest the value XI(GAMMA-L) inverted right perpendicular L almost-equal-to 0.5 x 10(9) eV . cm-1.

引用

页码：378 / 380

页数：3

共 9 条

[1] THE VALIDITY OF RAMOS THEOREM [J].