PULSED ION-BEAM MELTING OF SILICON

被引：15

作者：

FASTOW, R

MARON, Y

MAYER, J

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.31.893

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：893 / 898

页数：6

共 12 条

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NERI, JM ;

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :443-447

[3] RAPID SURFACE MELTING OF CU60 ZR40 METALLIC-GLASS [J].

FASTOW, R ;

GYULAI, J ;

NASTASI, M ;

ZIELINSKI, PG .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1984, 3 (02) :109-111

[4]

FASTOW R, 1983, LASER SOLID INTERACT

[5]

FASTOW R, UNPUB

[6] TIME-RESOLVED CONDUCTANCE AND REFLECTANCE MEASUREMENTS OF SILICON DURING PULSED-LASER ANNEALING [J].

GALVIN, GJ ;

THOMPSON, MO ;

MAYER, JW ;

PEERCY, PS ;

HAMMOND, RB ;

PAULTER, N .

PHYSICAL REVIEW B, 1983, 27 (02) :1079-1087

[7]

GIBSON AF, 1960, PROGR SEMICONDUCTORS, V4, P259

[8] ION-BEAM ANNEALING OF SEMICONDUCTORS [J].

HODGSON, RT ;

BAGLIN, JEE ;

PAL, R ;

NERI, JM ;

HAMMER, DA .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :187-189

[9]

NERI JM, 1982, THESIS CORNELL U

[10]

PALMSTROM CJ, 1983, LASER SOLID INTERACT

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