PULSED ION-BEAM IRRADIATION OF SILICON

被引：16

作者：

CHU, WK

MADER, SR

GOREY, EF

BAGLIN, JEE

HODGSON, RT

NERI, JM

HAMMER, DA

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[3] CORNELL UNIV,PLASMA STUDIES LAB,ITHACA,NY 14853

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 194卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(82)90561-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：443 / 447

页数：5

共 14 条

[1]

ANDERSON CL, 1980, LASER ELECTRON BEAM

[2] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :137-140

[3]

BAGLIN JEE, 1981, 5TH P INT C ION BEAM, V191, P169

[4]

Brown W.L., 1980, LASER ELECT BEAM PRO, P20

[5]

FERRIS SD, 1979, LASER SOLID INTERACT

[6]

GIBBONS JF, 1981, 1980 S LAS EL BEAM S

[7] ION-BEAM ANNEALING OF SEMICONDUCTORS [J].

HODGSON, RT ;

BAGLIN, JEE ;

PAL, R ;

NERI, JM ;

HAMMER, DA .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :187-189

[8] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON [J].

LO, HW ;

COMPAAN, A .

PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1604-1607

[9] PULSED RAMAN MEASUREMENT OF THE ONSET OF RECRYSTALLIZATION IN LASER ANNEALING [J].

LO, HW ;

COMPAAN, A .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :179-181

[10]

MADER SR, 1981, NOV MAT RES SOC ANN

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