APPROXIMATING SPUN-ON, THIN-FILM PLANARIZATION PROPERTIES ON COMPLEX TOPOGRAPHY

被引：29

作者：

WHITE, LK

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 01期

关键词：

D O I：

10.1149/1.2113754

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：168 / 172

页数：5

共 15 条

[1]

ADAMS AC, 1981, SOLID STATE TECHNOL, V24, P178

[2] PLANARIZATION OF PHOSPHORUS-DOPED SILICON DIOXIDE [J].

ADAMS, AC ;

CAPIO, CD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) :423-429

[3] DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSURE [J].

ADAMS, AC ;

CAPIO, CD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :1042-1046

[4] A 3-LAYER RESIST SYSTEM FOR DEEP UV AND RIE MICROLITHOGRAPHY ON NONPLANAR SURFACES [J].

BASSOUS, E ;

EPHRATH, LM ;

PEPPER, G ;

MIKALSEN, DJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :478-484

[5]

HIRATA K, 1981, IEEE T ELECTRON DEVI, V28, P1373

[6]

KREYSZIG E, 1967, ADV ENG MATH, P434

[7]

LIN YC, 1983, J ELECTROCHEM SOC, V130, P939, DOI 10.1149/1.2119862

[8] LINEWIDTH CONTROL IN PROJECTION LITHOGRAPHY USING A MULTILAYER RESIST PROCESS [J].

OTOOLE, MM ;

LIU, ED ;

CHANG, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) :1405-1410

[9]

POGGE HB, 1980, OCT EL SOC HOLL, V80, P805

[10] PROCESS FOR FORMING PASSIVATED METAL INTERCONNECTION SYSTEM WITH A PLANAR SURFACE [J].

ROTHMAN, LB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) :1131-1136

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