SPIN-DEPENDENT RECOMBINATION IN IRRADIATED SI/SIO2 DEVICE STRUCTURES

被引：59

作者：

VRANCH, RL ^{[1
]}

HENDERSON, B ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] UNIV STRATHCLYDE,DEPT PHYS & APPL PHYS,GLASGOW G4 0NG,SCOTLAND

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 14期

关键词：

D O I：

10.1063/1.99192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1161 / 1163

页数：3

共 20 条

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[18] ELECTRONIC TRAPS AND PB CENTERS AT THE SI/SIO2 INTERFACE - BAND-GAP ENERGY-DISTRIBUTION [J].

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[20]

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