CREDIBILITY OF DIFFERENT CALCULATIONAL SCHEMES FOR DEFECTS IN SEMICONDUCTORS - THEIR POWER AND THEIR LIMITS

被引：33

作者：

LANNOO, M

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 18期

关键词：

D O I：

10.1088/0022-3719/17/18/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

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页码：3137 / 3156

页数：20

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